| 摘要 |
A system, a method, and a program for predicting a processing shape by a plasma process by which a process state is measured on a realtime basis based on the result of which the processing shape is predicted. The system includes an apparatus condition DB 21, an incident ion DB 22, an incident radical DB 23, an actual measurement DB 24, a material property and surface reaction DB 25, a trajectory calculation unit 26, and a surface shape calculation unit 27. The trajectory calculation unit 26 calculates the trajectories of the respective ions incident on the surface of the substrate based on information and data obtained from the apparatus condition DB 21, the incident ion DB 22, and the incident radical DB 23 depending on the condition setting of the plasma processing apparatus 10, the respective pieces of data obtained from the actual measurement DB 24 depending on the condition setting of the plasma processing apparatus 10, and the respective pieces of data from the on-wafer monitoring sensor 11. Based on the calculation result by the trajectory calculation unit 26, the surface shape calculation unit 27 calculates the change of the shape by referring to the data stored in the material property and surface reaction DB 25. |
