SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide stable electric characteristics to a semiconductor device using an oxide semiconductor to achieve high reliability.

SOLUTION: A manufacturing method of a transistor including an oxide semiconductor film comprises: forming an amorphous oxide semiconductor film; introducing oxygen into the amorphous oxide semiconductor film to form an oxygen-rich amorphous oxide semiconductor film; forming an aluminum oxide film on the amorphous oxide semiconductor film; and subsequently crystallizing at least a part of the amorphous oxide semiconductor film by performing a heating treatment to form a crystalline oxide semiconductor film.

COPYRIGHT: (C)2013,JPO&INPIT