发明名称 MEMORY CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To provide a memory circuit that can suppress power consumption. <P>SOLUTION: A memory circuit holds data, which have been stored in a memory part corresponding to a volatile memory, in a capacitor provided in a memory part corresponding to a nonvolatile memory while power is not supplied to the memory circuit. In the nonvolatile memory part, a signal held in the capacitor can be held for a long time by using a transistor whose channel is formed in an oxide semiconductor layer. Thus, the memory circuit can hold a logic state (data signal) even while the power supply is stopped. Moreover, the data signal can be held without malfunction even though the power supply potential is one by increasing the potential applied to a gate of the transistor whose channel is formed in the oxide semiconductor layer with a boosting circuit provided between the gate of the transistor and the wire supplying the power supply potential. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012257192(A) 申请公布日期 2012.12.27
申请号 JP20120011623 申请日期 2012.01.24
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人
分类号 H03K3/356;H01L21/336;H01L21/8242;H01L21/8247;H01L27/10;H01L27/108;H01L27/115;H01L29/786;H01L29/788;H01L29/792;H03K19/0944 主分类号 H03K3/356
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