| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor light-emitting element that reduces the driving voltage by increasing the area near a p-type electrode pad to improve the light extraction efficiency and by preventing local current concentration. <P>SOLUTION: A nitride-based semiconductor light-emitting element 200 includes: a rectangular substrate 201 whose aspect ratio is 1.5 or more; an n-type nitride semiconductor layer 202 including an n-type In<SB POS="POST">X</SB>Al<SB POS="POST">Y</SB>Ga<SB POS="POST">1-X-Y</SB>N material; an active layer 203 of an In<SB POS="POST">X</SB>Al<SB POS="POST">Y</SB>Ga<SB POS="POST">1-X-Y</SB>N material and a p-type nitride semiconductor layer 204 of a p-type In<SB POS="POST">X</SB>Al<SB POS="POST">Y</SB>Ga<SB POS="POST">1-X-Y</SB>N material, which are stacked in order on a predetermined region of the n-type nitride semiconductor layer 202; a transparent electrode 205 provided on the p-type nitride semiconductor layer 204 and provided apart by a predetermined distance from an outer edge line of the p-type nitride semiconductor layer 204; a p-type electrode pad 206 provided on the transparent electrode 205 and provided apart by 50 to 200 μm from the outer edge line of the p-type nitride semiconductor layer 204; and an n-type electrode pad 207 provided on the n-type nitride semiconductor layer 202. <P>COPYRIGHT: (C)2013,JPO&INPIT |
