| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method that obtains a single crystal with high quality and long size. <P>SOLUTION: In a crucible 1, a raw material 2 of the single crystal 9 and a seed crystal 4 are set oppositely. In the crucible 1, a guide 3 which guides a sublimated gas from the raw material 2 into the seed crystal 4 and a tantalum ring 6 comprising tantalum or tantalum carbide which encloses the surrounding of the seed crystal 4 are set. In a closed space surrounded by the inside of the crucible 1, the guide 3 and the tantalum ring 6, thermal insulation material 5 is arranged. By heating the crucible 1 of the structure described above, the single crystal 9 is developed on the seed crystal 4 by sublimating the raw material 2. <P>COPYRIGHT: (C)2013,JPO&INPIT |
