| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with reduced variations in transistor characteristics. <P>SOLUTION: A semiconductor device comprises: an SOI substrate 101 including a semiconductor substrate 12 in which an N-type semiconductor layer 104 is formed on a P-type semiconductor layer 102, a BOX layer 106 formed on the semiconductor substrate 12, and an SOI layer 108 formed on the BOX layer; a first element isolation insulation layer 110b buried in the SOI substrate 101 with a bottom edge 16 reaching the P-type semiconductor layer 102 to separate a first element region (NFET region 30) and a second element region (PFET region 40); a P-type transistor 130b located in the second element region 40 and having a channel region 120b; an N-type transistor 130a located in the NFET region 30 and having a channel region 120a; a first back gate contact 134b connected to a second conductivity type layer 104 located in the second element region 40; and a second back gate contact 134a connected to the second conductivity type layer 104 located in the first element region 30. <P>COPYRIGHT: (C)2013,JPO&INPIT |
