发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME |
摘要 |
A substrate has a surface made of a semiconductor having a hexagonal single-crystal structure of polytype 4H. The surface of the substrate is constructed by alternately providing a first plane having a plane orientation of (0-33-8), and a second plane connected to the first plane and having a plane orientation different from the plane orientation of the first plane. A gate insulating film is provided on the surface of the substrate. A gate electrode is provided on the gate insulating film.
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申请公布号 |
US2012326166(A1) |
申请公布日期 |
2012.12.27 |
申请号 |
US201213529602 |
申请日期 |
2012.06.21 |
申请人 |
MASUDA TAKEYOSHI;HARADA SHIN;WADA KEIJI;HIYOSHI TORU;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
MASUDA TAKEYOSHI;HARADA SHIN;WADA KEIJI;HIYOSHI TORU |
分类号 |
H01L29/24;H01L21/336;H01L29/78 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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