发明名称 |
MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR, AND DISPLAY |
摘要 |
A method of making a thin film transistor made of a stack of an organic semiconductor layer, a gate insulating film and a gate electrode in this order on a substrate, which includes the steps of pattern coating a gate electrode material on the gate insulating film by printing; and carrying out a heat treatment to form the gate electrode resulting from drying for solidification of the pattern coated gate electrode material.
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申请公布号 |
US2012326154(A1) |
申请公布日期 |
2012.12.27 |
申请号 |
US201213606794 |
申请日期 |
2012.09.07 |
申请人 |
KAWASHIMA NORIYUKI;NOMOTO KAZUMASA;NOMOTO AKIHIRO;SONY CORPORATION |
发明人 |
KAWASHIMA NORIYUKI;NOMOTO KAZUMASA;NOMOTO AKIHIRO |
分类号 |
H01L21/28;H01L29/786;H01L33/02 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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