发明名称 MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR, AND DISPLAY
摘要 A method of making a thin film transistor made of a stack of an organic semiconductor layer, a gate insulating film and a gate electrode in this order on a substrate, which includes the steps of pattern coating a gate electrode material on the gate insulating film by printing; and carrying out a heat treatment to form the gate electrode resulting from drying for solidification of the pattern coated gate electrode material.
申请公布号 US2012326154(A1) 申请公布日期 2012.12.27
申请号 US201213606794 申请日期 2012.09.07
申请人 KAWASHIMA NORIYUKI;NOMOTO KAZUMASA;NOMOTO AKIHIRO;SONY CORPORATION 发明人 KAWASHIMA NORIYUKI;NOMOTO KAZUMASA;NOMOTO AKIHIRO
分类号 H01L21/28;H01L29/786;H01L33/02 主分类号 H01L21/28
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