发明名称 HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD
摘要 Disclosed is a thermal processing apparatus and method that can acquire a high throughput and reduce the occupation area of the thermal processing apparatus. A wafer is heated by an LED module that irradiates infrared light corresponding to the absorption wavelength of the wafer, and therefore, the wafer can be rapidly heated. Since an LED is used as a heat source and a temperature rise of LED is small, a cooling process after the heating process can be performed in the same process area as the heating process area. As a result, an installation area of the thermal processing apparatus can be reduced. Since the time for moving between a heating process area and a cooling process area can be saved, a time required for a series of processes including the heating process and the subsequent cooling process can be shortened, thereby improving a throughput.
申请公布号 US2012328273(A1) 申请公布日期 2012.12.27
申请号 US201213524023 申请日期 2012.06.15
申请人 KAWANO HISASHI;UEMURA RYOUICHI;YOSHIHARA KOUSUKE;KASAI SHIGERU;TANOUCHI KEIJI;MURAMATSU MAKOTO;IWASHITA MITSUAKI;YONEDA MASATAKE;OOYA KAZUHIRO 发明人 KAWANO HISASHI;UEMURA RYOUICHI;YOSHIHARA KOUSUKE;KASAI SHIGERU;TANOUCHI KEIJI;MURAMATSU MAKOTO;IWASHITA MITSUAKI;YONEDA MASATAKE;OOYA KAZUHIRO
分类号 H05B6/00 主分类号 H05B6/00
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