发明名称 |
AVALANCHE IMPACT IONIZATION AMPLIFICATION DEVICES |
摘要 |
A semiconductor photodetector may provide charge carrier avalanche multiplication at high field regions of a semiconductor material layer. A semiconductor current amplifier may provide current amplification by impact ionization near a high field region. A plurality of metal electrodes are formed on a surface of a semiconductor material layer and electrically biased to produce a non-uniform high electric field in which the high electric field strength accelerates avalanche electron-hole pair generation, which is employed as an effective avalanche multiplication photodetection mechanism or as an avalanche impact ionization current amplification mechanism. |
申请公布号 |
US2012326012(A1) |
申请公布日期 |
2012.12.27 |
申请号 |
US201213603567 |
申请日期 |
2012.09.05 |
申请人 |
ASSEFA SOLOMON;VLASOV YURII A.;XIA FENGNIAN;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ASSEFA SOLOMON;VLASOV YURII A.;XIA FENGNIAN |
分类号 |
H01L31/107;H03K17/06 |
主分类号 |
H01L31/107 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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