发明名称 AVALANCHE IMPACT IONIZATION AMPLIFICATION DEVICES
摘要 A semiconductor photodetector may provide charge carrier avalanche multiplication at high field regions of a semiconductor material layer. A semiconductor current amplifier may provide current amplification by impact ionization near a high field region. A plurality of metal electrodes are formed on a surface of a semiconductor material layer and electrically biased to produce a non-uniform high electric field in which the high electric field strength accelerates avalanche electron-hole pair generation, which is employed as an effective avalanche multiplication photodetection mechanism or as an avalanche impact ionization current amplification mechanism.
申请公布号 US2012326012(A1) 申请公布日期 2012.12.27
申请号 US201213603567 申请日期 2012.09.05
申请人 ASSEFA SOLOMON;VLASOV YURII A.;XIA FENGNIAN;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ASSEFA SOLOMON;VLASOV YURII A.;XIA FENGNIAN
分类号 H01L31/107;H03K17/06 主分类号 H01L31/107
代理机构 代理人
主权项
地址