| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the area of one memory cell in view of the fact that a content addressable memory has many elements in one memory cell and thus the area of one memory cell tends to be large. <P>SOLUTION: Charge can be held with the use of a channel capacitance in a reading transistor (capacitance between a gate electrode and a channel formation region). In other words, the reading transistor also serves as a charge storage transistor. One of a source and a drain of a charge supply transistor is electrically connected to a gate of the reading and charge storage transistor. <P>COPYRIGHT: (C)2013,JPO&INPIT |
