| 摘要 |
Provided is a method for manufacturing a semiconductor light emitting element (1) in which a defect is less likely to occur in a light emitting layer and a p-type semiconductor layer due to the surface of a second n-type semiconductor layer and which is capable of obtaining a high output. The method for manufacturing a semiconductor light emitting element includes a first step of forming a first n-type semiconductor layer (12c) on a substrate (11) and a second step of sequentially forming a regrowth layer (12d) of the first n-type semiconductor layer (12c), a second n-type semiconductor layer (12b), a light emitting layer (13), and a p-type semiconductor layer (14) on the first n-type semiconductor layer (12c). In the step of forming the second n-type semiconductor layer (12b), a step (1) of supplying Si less than that forming the regrowth layer (12d) as a dopant to form a first layer of the second n-type semiconductor layer and a step (2) of supplying the Si more than that in the step (1) to form a second layer of the second n-type semiconductor layer are performed in this order.
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