| 摘要 |
A low-permittivity interlayer insulating film of the present invention is formed by a plasma CVD method and includes at least carbon and silicon, wherein a ratio of the carbon to the silicon is 2.5 or more, and relative permittivity is 3.8 or less. Also, a film formation method of a low-permittivity interlayer insulating film of the present invention includes forming a film of an insulating film material that includes at least carbon and silicon by a plasma CVD method, wherein a hydrocarbon is not used as the insulating film material, and a ratio of the carbon to the silicon is 2.5 or more, and relative permittivity is 3.8 or less in the formed low-permittivity interlayer insulating film.
|
