DEFECT INSPECTION METHOD AND DEFECT INSPECTION DEVICE OF MASK SUBSTRATE, MANUFACTURING METHOD OF PHOTO MASK, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a defect inspection method of a mask substrate that can adequately perform defect inspection of the mask substrate.

SOLUTION: A defect inspection method according to an embodiment comprises: a step S12 of obtaining an asynchronous image of a mask substrate in an asynchronous state in which scan of a stage with the mask substrate placed on it is not synchronized with charge transfer from a TDI camera to obtain an image of the mask substrate; steps S13, S14, S15 of obtaining, on the basis of the asynchronous image, the number of positions having image intensity higher than a certain value; a step S16 of determining an image intensity threshold on the basis of the number of the positions; a step S17 of obtaining a synchronous image of the mask substrate in a synchronous state in which scan of the stage with the mask substrate placed on it is synchronized with charge transfer from the TDI camera to obtain an image of the mask substrate; and a step 18 of determining, on the basis of the synchronous image, that a position having an image intensity equal to or higher than the threshold is a defect.

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