| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory cell which can be adapted to multiple specifications by altering at least one of metal and contact layers, while the bulk of a diffusion layer, etc. are fixed. <P>SOLUTION: Memory units are juxtaposed along a row direction mirror symmetrically along a column direction configuring a 2 rows by 2 columns arrangement to form a memory cell. The memory units each include first to fourth diffusion layers juxtaposed along the row direction and extended in the column direction, thereby forming a pair of storage nodes. A first and a second word line are disposed outside the opposite ends of the first to the fourth diffusion layers. Between the first and the second word lines is secured a first metal wiring region along the row direction, allowing a first metal layer to be wired. At a position in the column direction of a boundary region of memory units arranged adjacent to each other in the column direction where the third and the fourth diffusion layers are disposed, there is secured a second metal wiring region along the column direction, allowing a second metal layer to be wired. <P>COPYRIGHT: (C)2013,JPO&INPIT |
