发明名称 TWO-STATE TYPE FORCE SENSOR KEYBOARD
摘要 <P>PROBLEM TO BE SOLVED: To provide a two-stage force sensor keyboard having at least one key and a thin film switch circuit positioned below the key. <P>SOLUTION: A thin film switch circuit includes a first connection point, a second connection point, a first isolation layer isolating the first and second connection points, a third connection point, a fourth connection point, and a second isolation layer isolating the third and fourth connection points. Thickness of the second isolation layer is larger than that of the first isolation layer. When a key is pressed by a first pressure, the first connection point contacts the second connection point, so as to generate a first signal. Also, when the key is pressed by a second pressure, the first connection point contacts the second connection point, and the third connection point contacts the fourth connection point, so as to generate a second signal. The larger a proportional value of the thickness of the second isolation layer and the thickness of the first isolation layer is, the more easily a user can identify a difference between the first pressure and the second pressure. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012256614(A) 申请公布日期 2012.12.27
申请号 JP20120202143 申请日期 2012.09.14
申请人 PRIMAX ELECTRONICS LTD 发明人 HWAN BING-FHEE;YANG JIAN MIN
分类号 H01H13/66;H01H13/702 主分类号 H01H13/66
代理机构 代理人
主权项
地址