发明名称 SRAM Differential Voltage Sensing Apparatus
摘要 An SRAM differential voltage sensing apparatus is coupled to a memory circuit. The memory circuit comprises a memory bank, a plurality of bit lines, a plurality of data lines coupled to the plurality of bit lines via a plurality of transmission gates and a sense amplifier. When the sense amplifier operates in a characterization mode, the transmission gates and pre-charge circuits are turned off. The differential voltage sensing apparatus applies a characterization signal to the sense amplifier and obtains the parameters of the memory circuit through a trial and error process.
申请公布号 US2012327730(A1) 申请公布日期 2012.12.27
申请号 US201113169511 申请日期 2011.06.27
申请人 CHEN YEN-HUEI;LI KUN-HSI;CHOU SHAO-YU;LIAO HUNG-JEN;CHAN WEI MIN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHEN YEN-HUEI;LI KUN-HSI;CHOU SHAO-YU;LIAO HUNG-JEN;CHAN WEI MIN
分类号 G11C7/00;G11C7/02 主分类号 G11C7/00
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