发明名称 |
SRAM Differential Voltage Sensing Apparatus |
摘要 |
An SRAM differential voltage sensing apparatus is coupled to a memory circuit. The memory circuit comprises a memory bank, a plurality of bit lines, a plurality of data lines coupled to the plurality of bit lines via a plurality of transmission gates and a sense amplifier. When the sense amplifier operates in a characterization mode, the transmission gates and pre-charge circuits are turned off. The differential voltage sensing apparatus applies a characterization signal to the sense amplifier and obtains the parameters of the memory circuit through a trial and error process.
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申请公布号 |
US2012327730(A1) |
申请公布日期 |
2012.12.27 |
申请号 |
US201113169511 |
申请日期 |
2011.06.27 |
申请人 |
CHEN YEN-HUEI;LI KUN-HSI;CHOU SHAO-YU;LIAO HUNG-JEN;CHAN WEI MIN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN YEN-HUEI;LI KUN-HSI;CHOU SHAO-YU;LIAO HUNG-JEN;CHAN WEI MIN |
分类号 |
G11C7/00;G11C7/02 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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地址 |
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