A method for forming a rectifier device is provided. The method forms a first layer on a substrate, a second layer is formed on the first layer and a photoresist layer is deposited on the second layer in which a plurality of trench patterns are formed. A plurality of trenches are formed in the first layer and the second layer by etching based on the trench patterns in the photoresist. The method then laterally etches the second layer to expose a corner portion of the first layer at mesas formed in between the two trenches. A portion of the second layer is preserved at an edge of the rectifier device.
申请公布号
WO2012083230(A3)
申请公布日期
2012.12.27
申请号
WO2011US65609
申请日期
2011.12.16
申请人
DIODES ZETEX SEMICONDUCTORS LIMITED;RILEY, LEE SPENCER;CHEN, ZE RUI