发明名称 HIGH TEMPERATURE HALF BRIDGE GATE DRIVER
摘要 A half bridge gate driving circuit for providing gate driving circuits in a bi-hecto Celsius (200 degrees Celsius) operating environment having multiple functions including combinations of multiple level logic inputs, noise immunity, fault protection, overlap protection, pulse modulation, high-frequency modulation with transformer based isolation, high-frequency demodulation back to pulse width modulation, deadtime generator, level shifter for high side transistor, overcurrent protection, and undervoltage lockout.
申请公布号 WO2012177873(A2) 申请公布日期 2012.12.27
申请号 WO2012US43545 申请日期 2012.06.21
申请人 ARKANSAS POWER ELECTRONICS INTERNATIONAL, INC.;REESE, BRADLEY ALAN,;VALLE-MAYORGA, JAVIER ANTONIO,;ESCORCIA-CARRANZA, IVONNE,;PHAN, KHOA MINH,;GUTSHALL, CALEB PAUL,;SCHUPBACH, ROBERTO MARCELO, 发明人 REESE, BRADLEY ALAN,;VALLE-MAYORGA, JAVIER ANTONIO,;ESCORCIA-CARRANZA, IVONNE,;PHAN, KHOA MINH,;GUTSHALL, CALEB PAUL,;SCHUPBACH, ROBERTO MARCELO,
分类号 H03K17/687;H02M3/335 主分类号 H03K17/687
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