| 摘要 |
A semiconductor device includes a semiconductor substrate, a source region, a drain region, an insulating film and a gate electrode. The source region is formed in the semiconductor substrate. The drain region is formed in the semiconductor substrate with being separate from the source region. The insulating film is formed between the source region and the drain region and on or above the semiconductor substrate. The insulating film includes lanthanum aluminate containing at least one element selected from Si, Ge, Mg, Ca, Sr, Ba and N. The lanthanum aluminate contains at least one element selected from Ti, Hf and Zr. The gate electrode is formed on the insulating film. |
