发明名称 |
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR STORAGE DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To lengthen holding time of data in a storage circuit; reduce power consumption; minimize circuit area; and increase the number of readable times of data per one writing operation of the data. <P>SOLUTION: A semiconductor device comprises a storage circuit. The storage circuit includes a first field effect transistor in which a data signal is input to one of a source and a drain, a second field effect transistor in which a gate is electrically connected to the other of the source and the drain of the first field effect transistor, and a rectifier having a pair of current terminals and one of the pair of current terminals is electrically connected to the source or the drain of the second field effect transistor. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2012256832(A) |
申请公布日期 |
2012.12.27 |
申请号 |
JP20110277158 |
申请日期 |
2011.12.19 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
KOYAMA JUN;YAMAZAKI SHUNPEI |
分类号 |
H01L21/8242;H01L21/336;H01L21/8247;H01L27/105;H01L27/108;H01L27/115;H01L29/786;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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