发明名称 |
GRAPHENE-LAYERED STRUCTURE, METHOD OF PREPARING THE SAME, AND TRANSPARENT ELECTRODE AND TRANSISTOR INCLUDING GRAPHENE-LAYERED STRUCTURE |
摘要 |
A method of directly growing graphene of a graphene-layered structure, the method including ion-implanting at least one ion of a nitrogen ion and an oxygen ion on a surface of a silicon carbide (SiC) thin film to form an ion implantation layer in the SiC thin film; and heat treating the SiC thin film with the ion implantation layer formed therein to graphenize a SiC surface layer existing on the ion implantation layer.
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申请公布号 |
US2012326128(A1) |
申请公布日期 |
2012.12.27 |
申请号 |
US201213530656 |
申请日期 |
2012.06.22 |
申请人 |
SHIN HYEON-JIN;CHOI JAE-YOUNG;AHN JOUNG-REAL;SEO JUNG-TAK;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIN HYEON-JIN;CHOI JAE-YOUNG;AHN JOUNG-REAL;SEO JUNG-TAK |
分类号 |
H01L21/20;B32B9/04;B82Y30/00;H01L29/16 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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