Interconnect structures and methods for back end of the line integration
摘要
A method of forming a semiconductor structure includes forming a sacrificial conductive material layer. The method also includes forming a trench in the sacrificial conductive material layer. The method further includes forming a conductive feature in the trench. The method additionally includes removing the sacrificial conductive material layer selective to the conductive feature. The method also includes forming an insulating layer around the conductive feature to embed the conductive feature in the insulating layer.
申请公布号
US2012329267(A1)
申请公布日期
2012.12.27
申请号
US201113164940
申请日期
2011.06.21
申请人
HORAK DAVID V.;KOBURGER, III CHARLES W.;PONOTH SHOM;YANG CHIH-CHAO;INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
HORAK DAVID V.;KOBURGER, III CHARLES W.;PONOTH SHOM;YANG CHIH-CHAO