INJECTION MEMBER USED IN THE MANUFACTURE OF A SEMICONDUCTOR, AND SUBSTRATE TREATMENT APPARATUS HAVING SAME

摘要

The present invention relates to a substrate treatment apparatus. The substrate treatment apparatus comprises: a process chamber receiving a plurality of substrates in order to perform a plasma treatment process; a support member installed within the process chamber in order to mount the plurality of substrates on the same plane thereof; an injection member installed opposite the support member and including a plurality of independent baffles for independently injecting at least one reaction gas and a purge gas into positions corresponding to the plurality of substrates placed on the support member; and a driving part for rotating the support member or the injection member so that the baffles of the injection member are successively rotated toward the upper sides of the plurality of substrates placed on the support member. The injection member comprises a plasma generator, installed on at least one baffle for injecting the reaction gas from the plurality of baffles, for plasmarizing the reaction gas to be injected onto the substrates.