发明名称 |
INTERCONNECT STRUCTURE INCLUDING A MODIFIED PHOTORESIST AS A PERMANENT INTERCONNECT DIELECTRIC AND METHOD OF FABRICATING SAME |
摘要 |
An interconnect structure is provided that may include at least one cured permanent patterned dielectric material located on a surface of a substrate. The at least one cured permanent patterned dielectric material is a cured product of a patterned photoresist that includes a dielectric enabling element therein. The structure further includes at least one conductively filled region embedded within the at least one cured permanent patterned dielectric material. |
申请公布号 |
US2012325532(A1) |
申请公布日期 |
2012.12.27 |
申请号 |
US201213602496 |
申请日期 |
2012.09.04 |
申请人 |
LIN QINGHUANG;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LIN QINGHUANG |
分类号 |
H05K1/11;H05K1/00;H05K1/02;H05K1/09 |
主分类号 |
H05K1/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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