发明名称 INTERCONNECT STRUCTURE INCLUDING A MODIFIED PHOTORESIST AS A PERMANENT INTERCONNECT DIELECTRIC AND METHOD OF FABRICATING SAME
摘要 An interconnect structure is provided that may include at least one cured permanent patterned dielectric material located on a surface of a substrate. The at least one cured permanent patterned dielectric material is a cured product of a patterned photoresist that includes a dielectric enabling element therein. The structure further includes at least one conductively filled region embedded within the at least one cured permanent patterned dielectric material.
申请公布号 US2012325532(A1) 申请公布日期 2012.12.27
申请号 US201213602496 申请日期 2012.09.04
申请人 LIN QINGHUANG;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 LIN QINGHUANG
分类号 H05K1/11;H05K1/00;H05K1/02;H05K1/09 主分类号 H05K1/11
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