METHOD OF FABRICATION OF A SEMICONDUCTOR SUBSTRATE AND A SEMICONDUCTOR SUBSTRATE

摘要

The invention concerns a fabrication method comprising the steps' consisting in forming a donor substrate (1) comprising a support layer (2) and a Strained seed layer (3), rendering the support layer (2) porous, treating the donor substrate (1) to deform in expansion or jn contraction the porous support layer (2') constituted of the first material, said deformation inducing relaxation in the seed layer (3'), increasing the thickness of the seed layer (3'), forming a strained layer (5) in contact with said seed layer (3'), and transferring at least part of the strained layer (5) from the donor substrate (1) to a receiver substrate (8).