发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To reduce the power consumption while suppressing the reduction in operation speed. <P>SOLUTION: A semiconductor device comprises: a first field effect transistor provided for a substrate having an insulation region on a first semiconductor region and having a second semiconductor region on the insulation region; an insulation layer provided on the substrate; a second field effect transistor provided for one flat surface of the insulation layer and including an oxide semiconductor layer; and a control terminal formed through the same process as a source and a drain of the second field effect transistor and receiving voltage for controlling the threshold voltage of the first field effect transistor. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012256834(A) 申请公布日期 2012.12.27
申请号 JP20120011663 申请日期 2012.01.24
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 FUJITA MASAFUMI;SHIONOIRI YUTAKA;TOMATSU HIROYUKI;KOBAYASHI HIDETOMO
分类号 H01L29/786;H01L21/8234;H01L27/08;H01L27/088 主分类号 H01L29/786
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