发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the power consumption while suppressing the reduction in operation speed. <P>SOLUTION: A semiconductor device comprises: a first field effect transistor provided for a substrate having an insulation region on a first semiconductor region and having a second semiconductor region on the insulation region; an insulation layer provided on the substrate; a second field effect transistor provided for one flat surface of the insulation layer and including an oxide semiconductor layer; and a control terminal formed through the same process as a source and a drain of the second field effect transistor and receiving voltage for controlling the threshold voltage of the first field effect transistor. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2012256834(A) |
申请公布日期 |
2012.12.27 |
申请号 |
JP20120011663 |
申请日期 |
2012.01.24 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
FUJITA MASAFUMI;SHIONOIRI YUTAKA;TOMATSU HIROYUKI;KOBAYASHI HIDETOMO |
分类号 |
H01L29/786;H01L21/8234;H01L27/08;H01L27/088 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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