| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a normally-off type high electron mobility transistor. <P>SOLUTION: A normally-off type transistor includes a first region of a III-V semiconductor material, a second region of the III-V semiconductor material on the first region, a third region of the III-V semiconductor material on the second region, and a gate electrode adjacent to at least one side wall of the third region. The first region provides a channel of the transistor. The second region has a bandgap larger than that of the first region, and induces a 2D electron gas (2DEG) in the channel. The second region is inserted in the area between the first region and the third region. The third region provides a gate of the transistor, and has thickness sufficient to deplete the 2DEG in the channel so that the transistor has a positive threshold voltage. <P>COPYRIGHT: (C)2013,JPO&INPIT |
