| 发明名称 |
FERROELECTRIC THIN FILM MANUFACTURING METHOD |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ferroelectric thin film manufacturing method capable of simply obtaining a ferroelectric thin film whose crystal orientation is preferentially controlled on a (110) face without a seed layer or a buffer layer. <P>SOLUTION: In this improved method, a composition for forming a ferroelectric thin film is applied on a lower electrode of a substrate having the lower electrode whose crystalline plane is oriented in a (111) axial direction, heated and crystallized to manufacture a ferroelectric thin film. The ferroelectric thin film is constituted by an orientation control layer whose crystal orientation is preferentially controlled on a (110) face. Thickness of the orientation control layer after crystallization is in a range of 5 nm-30 nm. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2012256851(A) |
申请公布日期 |
2012.12.27 |
| 申请号 |
JP20120073404 |
申请日期 |
2012.03.28 |
| 申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
WATANABE TOSHIAKI;SAKURAI HIDEAKI;SOYAMA NOBUYUKI;DOI TOSHIHIRO |
| 分类号 |
H01L21/8246;H01B3/00;H01B3/12;H01L21/316;H01L27/105;H01L41/18;H01L41/187;H01L41/24 |
主分类号 |
H01L21/8246 |
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