发明名称 Data-Aware SRAM Systems and Methods Forming Same
摘要 Exemplary embodiments for SRAM cells, new control units for SRAM systems, and embodiments of SRAM systems are described herein. An SRAM cell is configured to receive a first input voltage signal and a second input voltage signal with a different value from the first input voltage signal, and to maintain a first stored value signal and a second stored value signal. A control circuit is configured to receive a first input voltage signal and a second input voltage signal, and controlled by a sleep signal, a selection signal, and a data input signal, so that the output of the control circuit is data sensitive to the data input signal. An SRAM system comprises a plurality of SRAM cells, controlled the disclosed control circuit wherein an SRAM cell has two input voltage signals controlled by a data input signal and its complement signal respectively.
申请公布号 US2012327705(A1) 申请公布日期 2012.12.27
申请号 US201113168581 申请日期 2011.06.24
申请人 CHEN CHIEN-YUAN;CHEN YI-TZU;SHIEH HAU-TAI;CHANG TSUNG-YUNG JONATHAN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHEN CHIEN-YUAN;CHEN YI-TZU;SHIEH HAU-TAI;CHANG TSUNG-YUNG JONATHAN
分类号 G11C11/34;G11C5/14;G11C11/00 主分类号 G11C11/34
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