| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a novel semiconductor element that contributes to the expansion of a circuit scale. <P>SOLUTION: Two independent electric switches are formed using a single oxide semiconductor layer. For example, in a semiconductor element, formation of a channel (current path) in vicinity of a bottom surface (first surface) of the oxide semiconductor layer and formation of a channel in vicinity of a top surface (second surface) are independently controlled. This can reduce the circuit area as compared with the case where the two electric switches are separately provided (for example, two transistors are separately provided). In other words, by configuring the circuit with the semiconductor element, the expansion of the circuit area due to the expansion of the circuit scale can be suppressed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
