| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with high breakdown voltage, which performs control with high power. <P>SOLUTION: A semiconductor device comprises: a gate electrode; a gate insulation layer on the gate electrode; an oxide semiconductor layer overlapping with the gate electrode on the gate insulation layer; and a source electrode and a drain electrode with ends overlapping with the gate electrode in contact with the oxide semiconductor layer. In a region where the gate electrode overlaps with the oxide semiconductor layer, the gate insulation layer has a first region with an end overlapping with the drain electrode and a second region adjacent to the first region. The electrostatic capacity of the first region is smaller than that of the second region. <P>COPYRIGHT: (C)2013,JPO&INPIT |
