| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having less incidence of deterioration and variation of electrical characteristics, and provide a manufacturing method of the semiconductor device. <P>SOLUTION: A transistor using a wide bandgap semiconductor layer as a semiconductor layer comprises a structure in which the wide bandgap semiconductor layer is split like islands by an insulation layer having a passivation property in which moisture and atmospheric components less permeate. Because ends of the island-like wide bandgap semiconductor layer contact the insulation layer in this structure, a phenomenon of entry of moisture and atmospheric components into the wide bandgap semiconductor layer from ends of the semiconductor layer can be prevented. <P>COPYRIGHT: (C)2013,JPO&INPIT |
