| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device having a layout area of unit cells smaller than that of the past device while ensuring sufficient current drive capability of a cell transistor so that it can flow a sufficient current to a storage element. <P>SOLUTION: A semiconductor storage device according to a present embodiment comprises: a semiconductor substrate; an active area formed on the semiconductor substrate; a plurality of cell transistors formed in the active area; first and second bit lines being paired; a plurality of word lines intersecting the first and the second bit lines; and a plurality of storage elements with one ends electrically connected to sources or drains of the cell transistors, respectively, and with the other ends connected to the first or the second bit lines. Both the first and the second bit lines are connected with respect to the same active area via storage elements. <P>COPYRIGHT: (C)2013,JPO&INPIT |
