| 摘要 |
An MQW-structure light-emitting layer is formed by alternately stacking InGaN well layers and AlGaN barrier layers. Each well layer and each barrier layer are formed so as to satisfy the following relations: 12.9≰−2.8x+100y≰37 and 0.65≰y≰0.86, or to satisfy the following relations: 162.9≰7.1x+10z≰216.1 and 3.1≰z≰9.2, here x represents the Al compositional ratio (mol %) of the barrier layer, and y represents the difference in bandgap energy (eV) between the barrier layer and the well layer, and z represents the In compositional ratio (mol %) of the well layer.
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