| 摘要 |
The invention relates to a bipolar transistor, comprising a vertical layer sequence of emitter (106), base (108) and collector (110, 124, 120), in which the collector comprises a doped inner collector region (110) of a first conductivity type and a collector connecting region (120) of the first conductivity type, which is doped more in comparison with the inner collector region, and in which a collector drift region (124) of the first conductivity type, which is doped less in comparison with the inner collector region and has no buried, highly doped layer of the same conductivity type, i.e. without sub-collector, arranged beneath, adjoins the inner collector region (110) in a lateral direction which is oriented perpendicular to a vertical stacking direction of the layer sequence, the inner collector region being connected to the collector connecting region via said collector drift region. |
