SEMICONDUCTOR DEVICE AND METHOD FOR GROWING SEMICONDUCTOR CRYSTAL
摘要
A semiconductor device according to the embodiment comprises a base substrate; patterns on the base substrate; and an epitaxial layer on the base substrate, wherein the epitaxial layer is formed on a surface of the substrate exposed among the patterns. A method for growing a semiconductor crystal comprises the steps of cleaning a silicon carbide substrate; forming patterns on the silicon carbide substrate; and forming an epitaxial layer on the silicon carbide substrate.
申请公布号
WO2012177014(A2)
申请公布日期
2012.12.27
申请号
WO2012KR04674
申请日期
2012.06.13
申请人
LG INNOTEK CO., LTD.;HWANG, MIN YOUNG;KANG, SEOK MIN;KIM, MOO SEONG;JO, YEONG DEUK
发明人
HWANG, MIN YOUNG;KANG, SEOK MIN;KIM, MOO SEONG;JO, YEONG DEUK