发明名称 |
METHOD FOR ESTIMATING THE END OF LIFETIME FOR A POWER SEMICONDUCTOR DEVICE |
摘要 |
The invention regards an method for estimating the end of lifetime for a power semiconductor device, such as an IGBT power module, comprising the steps of; establishing the temperature of the power semiconductor device, determining the voltage drop over the power semiconductor device for at least one predetermined current where the current is applied when the power semiconductor device is not in operation, wherein the end of lifetime is established dependent on the change in a plurality of determined voltage drops. |
申请公布号 |
WO2012175603(A1) |
申请公布日期 |
2012.12.27 |
申请号 |
WO2012EP61949 |
申请日期 |
2012.06.21 |
申请人 |
KK-ELECTRONIC A/S;THOEGERSEN, PAUL BACH;RANNESTED, BJOERN |
发明人 |
THOEGERSEN, PAUL BACH;RANNESTED, BJOERN |
分类号 |
G01R31/26 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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