METHOD FOR FORMING RESIST PATTERNS AND METHOD FOR PRODUCING PATTEREND SUBSTRATES EMPLOYING THE RESIST PATTERNS

摘要

[Objective] To enable the widths of protrusions of a resist pattern after residual film etching steps to be a desired value greater than or equal to the widths of the protrusions of the resist pattern prior to the residual film etching steps. [Constitution] Residual film etching steps for etching a resist film (2) onto which a pattern (13) of protrusions and recesses (13) has been formed includes: a first etching step that employs a first etching gas including a sedimentary gas that generates sediment (4) during etching to etch the resist film under conditions such that the sediment (4) is deposited on the side walls (2a) of protrusions of a resist pattern while residual film (2b) is etched. The conditions are set such that steps following the first etching step etch the resist film (2) such that the widths of the protrusions (2a) including the deposited sediment (4) become a desired width greater than or equal to the widths of the protrusions (2a) prior to the residual film etching steps.