<p>A current aperture vertical electron transistor (CAVET) with ammonia (NH3) based molecular beam epitaxy (MBE) grown p-type Gallium Nitride (p-GaN) as a current blocking layer (CBL). Specifically, the CAVET features an active buried Magnesium (Mg) doped GaN layer for current blocking purposes. This structure is very advantageous for high power switching applications and for any device that requires a buried active p-GaN layer for its functionality.</p>
申请公布号
WO2012177699(A1)
申请公布日期
2012.12.27
申请号
WO2012US43250
申请日期
2012.06.20
申请人
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;CHOWDHURY, SRABANTI;YELURI, RAMYA;HURNI, CHRISTOPHE;MISHRA, UMESH K.;BEN-YAACOV, ILAN
发明人
CHOWDHURY, SRABANTI;YELURI, RAMYA;HURNI, CHRISTOPHE;MISHRA, UMESH K.;BEN-YAACOV, ILAN