| 摘要 |
<p>A thin-film transistor (TFT) substrate (100) is provided with a TFT disposed on a substrate (2), first insulating layers (24, 26) disposed above the TFT, a base layer transparent electrode (12) disposed above the first insulating layers (24, 26), a second insulating layer (28) covering the base layer transparent electrode (12), and a pixel electrode (10) disposed on the second insulating layer (28), wherein an auxiliary capacitor (Cs) is formed by means of the base layer transparent electrode (12), the second insulating layer (28) and the pixel electrode (10). The TFT and the pixel electrode (10) are electrically connected via a contact hole (34) penetrating the first insulating layers (24, 26) and the second insulating layer (28). A transparent electrode (14) for connection is disposed within the contact hole (34).</p> |
