发明名称 WIRING STRUCTURES AND METHODS OF MANUFACTURING THE SAME
摘要 PURPOSE: A wiring structure and a manufacturing method thereof are provided to outgas impurities on interlayer dielectric layers by forming a dummy plug of a second contact structure on a second interlayer dielectric layer via a diffusion barrier. CONSTITUTION: A first plug(120) passes through a first interlayer dielectric layer(110) on a substrate(100). A first wiring(150) passes through a second interlayer dielectric layer(140) on the first interlayer dielectric layer. A diffusion barrier pattern exposes a part of the second interlayer dielectric layer. A second plug(182) is contacted with the first wiring via the diffusion barrier pattern. A second wiring(192) is electrically connected to the second plug.
申请公布号 KR20120138875(A) 申请公布日期 2012.12.27
申请号 KR20110058283 申请日期 2011.06.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, JONG HYUN;KIM, JEE YONG;LEE, JOON HEE;SONG, JAI HYUK;JO, SANG YOUN
分类号 H01L21/768;H01L21/28 主分类号 H01L21/768
代理机构 代理人
主权项
地址