WIRING STRUCTURES AND METHODS OF MANUFACTURING THE SAME
摘要
PURPOSE: A wiring structure and a manufacturing method thereof are provided to outgas impurities on interlayer dielectric layers by forming a dummy plug of a second contact structure on a second interlayer dielectric layer via a diffusion barrier. CONSTITUTION: A first plug(120) passes through a first interlayer dielectric layer(110) on a substrate(100). A first wiring(150) passes through a second interlayer dielectric layer(140) on the first interlayer dielectric layer. A diffusion barrier pattern exposes a part of the second interlayer dielectric layer. A second plug(182) is contacted with the first wiring via the diffusion barrier pattern. A second wiring(192) is electrically connected to the second plug.
申请公布号
KR20120138875(A)
申请公布日期
2012.12.27
申请号
KR20110058283
申请日期
2011.06.16
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
PARK, JONG HYUN;KIM, JEE YONG;LEE, JOON HEE;SONG, JAI HYUK;JO, SANG YOUN