| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which has high light extraction efficiency and high luminance. <P>SOLUTION: A semiconductor light-emitting element comprises: a light emitting layer composed of a III-V compound semiconductor; a first electrode having a reflection metal layer; an insulation layer having an opening; a first conductivity type layer; a second conductivity type layer; and a second electrode. The first conductivity type layer is provided above the first electrode and below the light-emitting layer and composed of a III-V compound semiconductor having band-gap energy larger than band-gap energy of the light-emitting layer. The first conductivity type layer includes a first contact layer, a composition inclination layer and a first clad layer. The second conductivity type layer is provided between the light-emitting layer and the second electrode and includes a current diffusion layer and a second contact layer. The second electrode includes a pad part and a thin line part extending outward from the pad part to above the second contact layer. When viewed from above, the opening of the insulation layer and the second contact layer do not overlap with each other. <P>COPYRIGHT: (C)2013,JPO&INPIT |
