| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the operation efficiency of an emitter and the confinement of carriers, by reducing, canceling or inverting a spontaneously generated polarization induced field in a semiconductor light emitter where crystal layers (2-7) are grown in the polarity direction. <P>SOLUTION: In order to reduce the difference of material composition of adjoining crystal layers (2-7), and to generate space charges and a pseudo field retarding the polarization induced charges, one or a plurality of layers are graded, various impurities being ionized to a charge state opposite from that of the polarization induced charges are taken into a semiconductor, the order of charged atom layers is reversed, the growth order of n-type layer and p-type layer in the device is reversed, a multilayer discharge system is used in place of a uniform active region, and/or the in-plane lattice constant of the material is changed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
