发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To reduce contamination of a substrate derived from a LTHC film. <P>SOLUTION: A manufacturing method of a semiconductor device comprises the steps of: sticking a first principal surface of a substrate to a support substrate via a photo-thermal conversion film; and removing the photo-thermal conversion film exposed on the support substrate. This manufacturing method further includes the steps of: forming a photo-thermal conversion film on the support substrate; sticking a semiconductor substrate to the support substrate so that the photo-thermal conversion film extends to the outside from the semiconductor substrate; performing contamination prevention processing for the photo-thermal conversion film; and separating the support substrate and the semiconductor substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012256846(A) 申请公布日期 2012.12.27
申请号 JP20120039946 申请日期 2012.02.27
申请人 ELPIDA MEMORY INC 发明人 ONO KENTA
分类号 H01L21/304;B23K26/00;B23K26/06;B23K26/36;H01L21/3205;H01L21/768;H01L23/522 主分类号 H01L21/304
代理机构 代理人
主权项
地址