| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for processing a wafer with electrodes buried therein by which electrodes can be exposed from the backside of a substrate by preparing the substrate to have a given thickness, and a gettering effect can be obtained. <P>SOLUTION: The wafer processing method is for preparing a wafer to have a predetermined finished thickness, provided that the wafer includes a substrate and electrodes buried therein, and the electrodes are connected with bonding pads respectively provided on a plurality of devices formed on a surface of the substrate. The method comprises: a property-modification layer formation step where the substrate is irradiated with laser light of a wavelength which can permeate the substrate from the backside thereof, thereby forming a property-modification layer on the backside of a boundary portion for defining a finished thickness, which is located inside the substrate; a backside-grinding step where the substrate with the property-modification layer formed therein is ground from its backside to a point not reaching the property-modification layer; and an etching step where the substrate subjected to the backside grinding is etched from the backside thereof to arrange the electrodes protruding from the backside of the substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT |
