发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
摘要 <P>PROBLEM TO BE SOLVED: To solve such a problem that when an insulating film being buried has a joint surface in an isolation part formed around a substrate through electrode, the isolation part on the rear surface of the substrate after grinding is likely to lower the mechanical strength because the joint surface reaches the rear surface of the substrate from the principal surface thereof, and the inside region of the isolation part is likely to be isolated when a stress is applied to the through electrode. <P>SOLUTION: Since an insulating film filling an isolation part 5 has a laminate structure of at least two steps of a first insulating film 3 and a second insulating film 4, a joint surface 3S of the first insulating film 3 and a joint surface 4S of the second insulating film 4 are divided in a region of the bottom face of the second insulating film 4 where the joint surface does not exist. Consequently, the mechanical strength increases and the inside region of the isolation part can be prevented from being isolated. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012256785(A) 申请公布日期 2012.12.27
申请号 JP20110129987 申请日期 2011.06.10
申请人 ELPIDA MEMORY INC 发明人 KOBAYASHI HIRONAO
分类号 H01L21/3205;H01L21/768;H01L23/522;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L21/3205
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