发明名称 INTERDIGITATED VERTICAL NATIVE CAPACITOR
摘要 A metal capacitor structure includes a plurality of line level structures (15, 16, 25, 26) vertically interconnected with via level structures (31, 32, 33, 34, 41, 42). Each first line level structure (15 or 25) and each second line level structure (16 or 26) includes a set of parallel metal lines (11 or 21, 12 or 22) that is physically joined at an end to a rectangular tab structure (13 or 23, 14 or 24) having a rectangular horizontal cross-sectional area. A first set of parallel metal lines (11 or 21) within a first line level structure (15 or 25) and a second set of parallel metal lines (12 or 22) within a second line level structure (16 or 26) are interdigitated and parallel to each other, and can collectively form an interdigitated uniform pitch structure ((11, 12) or (21, 22)). Because the rectangular tab structures (13 or 23, 14 or 24) do not protrude toward each other within a region between two facing sidewalls of the rectangular tab structures (13 or 23, 14 or 24), sub- resolution assist features (SRAFs) can be employed to provide a uniform width and a uniform pitch throughout the entirety of the interdigitated uniform pitch structure ((11, 12) or (21, 22)).
申请公布号 WO2012177380(A2) 申请公布日期 2012.12.27
申请号 WO2012US40849 申请日期 2012.06.05
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION;THOMPSON, ERIC;BOOTH, JR., ROGER, A.;LU, NING;PUTNAM, CHRISTOPHER, S. 发明人 THOMPSON, ERIC;BOOTH, JR., ROGER, A.;LU, NING;PUTNAM, CHRISTOPHER, S.
分类号 H01L27/108;H01L21/8242 主分类号 H01L27/108
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