发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
摘要 |
An improvement is provided in a manufacturing yield of a semiconductor device including transistors in which gate insulating films have different thicknesses. After a high-breakdown-voltage insulating film is formed over a silicon substrate, a surface of the high-breakdown-voltage insulating film is abraded for a reduction in the thickness thereof so that a middle-breakdown-voltage insulating film is formed to be adjacent to the high-breakdown-voltage insulating film. The high-breakdown-voltage insulating film is formed by a thermal oxidation method so as to extend from an inside of the main surface of the silicon substrate to an outside thereof. The middle-breakdown-voltage insulating film is formed so as to be thinner than the high-breakdown-voltage insulating film. The high-breakdown-voltage insulating film is formed as the gate insulating film of a high-breakdown-voltage MIS transistor, while the middle-breakdown-voltage insulating film is formed as the gate insulating film of a middle-breakdown-voltage MIS transistor. |
申请公布号 |
US2012329240(A1) |
申请公布日期 |
2012.12.27 |
申请号 |
US201213607804 |
申请日期 |
2012.09.10 |
申请人 |
FUJII YASUHIRO;YONEKURA KAZUMASA;KANEOKA TATSUNORI;RENESAS ELECTRONICS CORPORATION |
发明人 |
FUJII YASUHIRO;YONEKURA KAZUMASA;KANEOKA TATSUNORI |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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