| 摘要 |
<p>The present invention is a method for polishing a silicon wafer in which COPs are present. The polishing method is characterized by polishing silicon wafers in which COPs are present using a polishing agent that includes at least water, silica, and tetramethylammonium hydroxide, has a concentration for the tetramethylammonium hydroxide to the total amount by mass of the polishing agent of 0.01 to less than 0.3% by mass, has a concentration for the silica to the total amount by mass of the polishing agent of 0.1 to 1.2% by mass, and has a primary grain size of 18 nm or greater for the silica. Thus, the present invention obtains a polishing method in which the polishing efficiency is high, increases in the number of crystal defects (COPs) during polishing can be prevented, and the flatness of the wafer can be improved.</p> |
